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| DISCRETE SEMICONDUCTORS DATA SHEET PBSS5140T 40 V low VCEsat PNP transistor Product specification Supersedes data of 2001 Jul 20 2004 Jan 07 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor FEATURES * Low collector-emitter saturation voltage * High current capabilities * Improved device reliability due to reduced heat generation. APPLICATIONS * General purpose switching and muting * LCD back lighting * Supply line switching circuits * Battery driven equipment (mobile phones, video cameras and hand-held devices). DESCRIPTION PNP low VCEsat transistor in a SOT23 plastic package. MARKING handbook, halfpage PBSS5140T QUICK REFERENCE DATA SYMBOL VCEO ICM RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage peak collector current equivalent on-resistance MAX. -40 -2 <500 UNIT V A m 3 3 1 TYPE NUMBER PBSS5140T Note 1. * = p: made in Hongkong. * = t: made in Malaysia. * = W: made in China. ORDERING INFORMATION MARKING CODE(1) p2H* Top view 2 1 2 MAM256 Fig.1 Simplified outline (SOT23) and symbol. PACKAGE TYPE NUMBER NAME PBSS5140T - DESCRIPTION plastic surface mounted package; 3 leads VERSION SOT23 2004 Jan 07 2 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Notes PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; note 1 Tamb 25 C; note 2 CONDITIONS open emitter open base open collector - - - - - - - - -65 - -65 MIN. PBSS5140T MAX. -40 -40 -5 -1 -2 -1 300 450 +150 150 +150 V V V A A A UNIT mW mW C C C 1. Device mounted on a printed-circuit board, single-sided copper, tinplated and standard footprint. 2. Device mounted on a printed-circuit board, single-sided copper, tinplated and mounting pad for collector 1 cm2. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; note 1 in free air; note 2 VALUE 417 278 UNIT K/W K/W Notes 1. Device mounted on a printed-circuit board, single-sided copper, tinplated and standard footprint. 2. Device mounted on a printed-circuit board, single-sided copper, tinplated and mounting pad for collector 1 cm2. 2004 Jan 07 3 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL ICBO ICEO IEBO hFE PARAMETER collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain CONDITIONS VCB = -40 V; IC = 0 VCB = -40 V; IC = 0; Tj = 150 C VCE = -30 V; IB = 0 VEB = -5 V; IC = 0 VCE = -5 V; IC = -1 mA VCE = -5 V; IC = -100 mA VCE = -5 V; IC = -500 mA VCE = -5 V; IC = -1 A VCEsat collector-emitter saturation voltage IC = -100 mA; IB = -1 mA IC = -500 mA; IB = -50 mA IC = -1 A; IB = -100 mA RCEsat VBEsat VBEon fT Cc Note 1. Pulse test: tp 300 s; 0.02. equivalent on-resistance base-emitter saturation voltage base-emitter turn-on voltage transition frequency collector capacitance IC = -500 mA; IB = -50 mA; note 1 IC = -1 A; IB = -50 mA VCE = -5 V; IC = -1 A IC = -50 mA; VCE = -10 V; f = 100 MHz VCB = -10 V; IE = Ie = 0; f = 1 MHz MIN. - - - - 300 300 250 160 - - - - - - 150 - PBSS5140T TYP. - - - - - - - - - - - 300 - - - - MAX. -100 -50 -100 -100 - 800 - - -200 -250 -500 <500 -1.1 -1 - 12 UNIT nA A nA nA mV mV mV m V V MHz pF 2004 Jan 07 4 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5140T handbook, halfpage 1200 MLD452 handbook, halfpage -10 MLD453 hFE (1) VBE (V) 800 (2) -1 (1) (2) 400 (3) (3) 0 -10-1 -1 -10 -102 -103 -104 IC (mA) -10-1 -10-1 -1 -10 -102 -103 -104 IC (mA) VCE = -5 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. VCE = -5 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.2 DC current gain as a function of collector current; typical values. Fig.3 Base-emitter voltage as a function of collector current; typical values. -103 handbook, halfpage VCEsat (mV) -102 (1) MLD454 102 handbook, halfpage RCEsat () 10 MLD677 (3) (2) (1) (2) -10 1 (3) -1 -1 -10 -102 -103 IC (mA) -104 10-1 -10-1 -1 -10 -10-2 -10-3 -10-4 IC (mA) IC/IB = 10. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. IC/IB = 10. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.5 Equivalent on-resistance as a function of collector current; typical values. 2004 Jan 07 5 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5140T handbook, halfpage 300 MLD678 fT (MHz) 200 100 0 0 -200 -400 -600 -800 -1000 IC (mA) VCE = -10 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. Fig.6 Transition frequency as a function of collector current; typical values. 2004 Jan 07 6 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PACKAGE OUTLINE PBSS5140T Plastic surface mounted package; 3 leads SOT23 D B E A X HE vMA 3 Q A A1 1 e1 e bp 2 wMB detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC TO-236AB EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 2004 Jan 07 7 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION PBSS5140T This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2004 Jan 07 8 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. (c) Koninklijke Philips Electronics N.V. 2004 SCA76 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/03/pp9 Date of release: 2004 Jan 07 Document order number: 9397 750 12438 |
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